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SYMPOSIUM C

11:00 AM *C1-S2.1 (invited)
Spin and Valley Degree of Freedom in Silicon Quantum Structures. (#1398) Yoshiro Hirayama, Tohoku University & ERATO Nuclear Spin Electronics Project, Sendai, Miyagi, Japan.

11:30 AM *C1-S2.2 (invited)
Quantum Dots and Radio-Frequency Single Electron Transistors in Silicon. (#366) Susan Jane Angus¹, Andrew Ferguson², Andrew Dzurak³, Robert Clark³; ¹The University of Melbourne, Parkville, Victoria, Australia ; ²University of Cambridge, United Kingdom ; ³The University of New South Wales, Sydney, Australia.

12:00 PM C1-S2.3
Ion Implantation through Thin Silicon Dioxide Layers for Si-Based Solid-State Quantum Computer Device Development. (#854) Jeffrey Colin McCallum¹, Michael Dunn¹, Eric Gauja²; ¹The University of Melbourne, Parkville, Victoria, Australia ; ²The University of New South Wales, Sydney, Australia.

12:15 PM C1-S2.4
Developments in the Enhancement of Band-Edge Luminescence in Silicon for Future Light Emitting Devices. (#962) Byron John Villis, Paul G Spizzirri, Brett C Johnson, Jeffrey C McCallum; The University of Melbourne, Parkville, Victoria, Australia.

2:00 PM *C1-S3.1 (invited)
Addressing the Charge and Spin of a Single Dopant Atom in a Nano MOSFET. (#1394) Sven Rogge, Kavli Institute of NanoScience, Delft University of Technology, Netherlands.

2:30 PM *C1-S3.2 (invited)
STM-Patterned P-donor Based Planar Quantum Dot Structures in Silicon. (#1013) Martin Fuechsle, Andreas Fuhrer, Thilo C. G. Reusch, Michelle Y. Simmons; Centre for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, Australia.

3:00 PM C1-S3.3
Towards 3D Silicon Device Fabrication: The Effect of Incorporation Temperature on Activation and Encapsulation of P:Si Delta-Doped Layers. (#990) Sarah Rose McKibbin, The University of New South Wales, Sydney, Australia.

3:15 PM C1-S3.4
Fabrication and Characterizations of Atomically-Controlled Fe₃Si/Ge Heterostructures for Spin-Transistors with Ge Channel. (#285) Masanobu Miyao¹, Koji Ueda¹, Yuichiro Ando¹, Mamoru Kumano¹, Yuji Kishi¹, Taizoh Sadoh¹, Kazumasa Narumi², Yusuke Hiraiwa³, Yoshihito Maeda³, Yukio Nozaki¹, Kimihide Matsuyama¹; ¹Department of Electronics, Kyushu University, Fukuoka, Japan ; ²Japan Atomic Energy Agency, Japan ; ³Kyoto University, Japan.

4:00 PM *C1-S4.1 (invited)
Ge-On-Insulator Substrates Formed by Ge Condensation Technique: Fabrication, Modeling and Characterization. (#1395) Jean-François Damlencourt¹, B. Vincent¹, C. Le Royer¹, P. Rivallin¹, E. Martinez¹, M.C. Roure¹, Y. Campidelli², D. Rouchon¹, T. Nguyen³, S. Cristoloveanu³, Y. Morand², S. Descombes², L. Clavelier¹; ¹CEA-DRT-LETI - CEA/GRE, Grenoble, France ; ²ST Microelectronics, Grenoble, France ; ³IMEP-INP Grenoble-Minatec, France.

4:30 PM C1-S4.2
A Nanoscopic Investigation on Thermal Decomposition of Ultrathin Silicon Oxide by High Temperature Scanning Tunneling Microscopy. (#520) Jian-Bin Xu, Kun Xue, Aaron H.P. Ho; Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong.

4:45 PM C1-S4.3
Floating Polysilicon Wing Spacer Structure to Improve Erase Performance of NAND Flash Memory. (#150) Jung-Chan Lee, Samsung, Republic of Korea.

C1-S5.1
Parameter Extraction for Silicon-on-Sapphire MOSFETs by using Inverse Modelling of Capacitance Measurements. (#772) Karl Bertling¹, Hiroshi Domyo², Young Tai Kim³, Tran Ho³, Aleksandar D. Rakić¹, Yew-Tong Yeow¹; ¹School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane, Australia ; ²Peregrine Semiconductor Corporation, USA ; ³Peregrine Semiconductor Australia, Australia.

C1-S5.2
Origin of the Low Frequency Type CV Curve in Silicon-on-Sapphire MOS Capacitors. (#770) Hiroshi Domyo¹, Karl Bertling², Tran Ho³, Neal Kistler¹, George Imthurn¹, Michael Stuber¹, Aleksandar D. Rakić², Yew-Tong Yeow²; ¹Peregrine Semiconductor Corporation, USA ; ²School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane, Australia ; ³Peregrine Semiconductor Australia, Australia.

C1-S5.3
First-principles Study on Vacancy in Ge under Biaxial Strain. (#714) Jung-Hae Choi, Kwang-Duk Na, Cheol Seong Hwang, Seung-Cheol Lee, Kwang-Ryeol Lee; Korea Institute of Science and Technology, Republic of Korea.

C1-S5.4
Nonvolatile Memories by using Well-Defined Ge Nanodot Layers in SiO₂ and Zr₂. (#72) Suk-Ho Choi, Department of Physics and Applied Physics, College of Electronics and Information, Kyung Hee University, Republic of Korea.

C1-S5.5
Laplace Deep Level Transient Spectroscopy of Ultra Shallow Implanted Junctions in Si. (#704) Niki Mitromara¹, Jan Evans-Freeman¹, Ray Duffy²; ¹Research Centre for Electronic Devices and Materials, Materials and Engineering Research Institute, ACES Faculty, Sheffield Hallam University, United Kingdom ; ²NXP Semiconductors, United Kingdom.

C1-S5.6
Applications of Anodic Aluminum Oxide Templates in Nano-Implantation and Single Crystal Growth. (#1014) Jinghua Fang, Paul Spizziri, Alberto Cimmino, Sergey Rubanov, Steven Prawer; The University of Melbourne, Parkville, Victoria, Australia.

C1-S5.10
Molecular Beam Epitaxial Growth of Si on Heavily Boron-Doped Si(111) Surface: From Initial Stages to the growth of Si Polytypes. (#335) Andreas Fissel¹, Tammo Block¹, Dirk Kühne¹, Eberhard Bugiel², Hans Jörg Osten²; ¹Information Technology Laboratory, Leibniz University of Hannover, Germany ; ²Institute of Electronic Materials and Devices, Leibniz University of Hannover, Germany.

C1-S5.11
Rod-Like Defect Decoration with Transition Metals. (#508) Maria G. Ganchenkova¹, Vladimir A. Borodin², Risto M Nieminen¹; ¹COMP/Laboratory of Physics, Helsinki University of Technology, Espoo, Finland ; ²Russian Research Centre, Kurchatov Institute, Russian Federation.

C1-S5.12
The Effect of Doping Type and Concentration on Optical Absorption via Implantation Induced Defects in Silicon-on-Insulator Waveguides. (#636) Russell Gwilliam¹, Andrew Knights², Matthew Halsall³; ¹Surrey Ion Beam Centre, Nodus Lab, University of Surrey, Guildford, United Kingdom ; ²McMaster University, Hamilton, Ontario, Canada ; ³University of Manchester, United Kingdom.

C1-S5.13
Photo-detector of Silicon Nano-pillar. (#572) Shu-Fen Hu, Department of Physics, National Taiwan Normal University, Taipei, Taiwan.

C1-S5.14
Radiolysis of Quartz Nano-Inclusions in Silicon Single Crystals. (#262) Elvira Memet Ibragimova, Makhmud Umar Kalanov, Rakhima Nurmat Khamraeva, Vasilya Mamat Rustamova; Radiation Solid State Physics Department, Institute of Nuclear Physics, Ulugbek, Uzbekistan.

C1-S5.15
Method for Fabricating Uniform Porous Silicon via Pulsed Anodisation. (#951) Timothy Denis James, Adrian Keating, Gia Parish, Charles Musca; Microelectronics Research Group, School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.

C1-S5.16
Double Boundary Trench Isolation Effects on a Stacked Gradient Homojunction Photodiode Array. (#1335) Paul Vernon Jansz, Steven Hinckley; Edith Cowan University, Australia.

C1-S5.17
Modeling of Optical Properties in Silicon Nanocrystals. (#1161) Farshid Karbassian¹, Hasan Ghafoorifard¹, Shams Mohajerzadeh²; ¹School of Electrical Engineering, Tehran Polytechnic, Iran ; ²School of Electrical Engineering and Computer Engineering, Tehran Polytechnic, Iran.

C1-S5.19
Surface Roughness Engineering for Si-Based MSM Photodetector Applications. (#26) Mohd Zaki Bin Mohd Yusoff, MD Roslan Hashim; NOR LAB, School of Physics, Univesiti Sains Malaysia, Penang, Malaysia.

C1-S5.20
Schottky Barrier Height Enhancement of n-Si (100) by Temperature Treatment for Photodetector Application. (#27) Mohd Zaki Bin Mohd Yusoff, NOR LAB, School of Physics, Univesiti Sains Malaysia, Penang, Malaysia.

C1-S5.21
Fabrication and Electrical Properties of SrBi₂Ta₂O₉ Thin Films on Si(100) using LaZrO_x Buffer Layer for the 1T-type FeRAMs. (#213) Byung-Eun Park, Jong-Hyun Im, Ho-Seung Jeon, Chul-Ju Kim; University of Seoul, Republic of Korea.

C1-S5.22
Fabrication and Electrical Properties of Sol-Gel Derived High-k Dielectric Lanthanum Zirconium Oxide Thin Films. (#1034) Byung-Eun Park, Ho-Seung Jeon, Jong-Hyun Im, Chul-Ju Kim; University of Seoul, Republic of Korea.

C1-S5.23
Characterization of Interface States in PtSi/p-Si Schottky Diodes Using Admittance Technique. (#805) Azzouz Sellai, Department of Physics, Sultan Qaboos University, Oman.

C1-S5.24
Pressure-Induced Phase Transitions in Semiconductors. (#182) Varghese Swamy, Department of Materials Engineering, Monash University, Victoria, Australia.

C1-S5.25
An Angular Dependence Deep-level Transient Spectroscopy Study of He Implanted Si. (#738) Byron John Villis, Jeffrey C McCallum; The University of Melbourne, Parkville, Victoria, Australia.

C1-S5.26
Investigation of SOI Materials Fabricated by Etch Stop Thinning Process. (#156) Xing Wei, Miao Zhang, Meng Chen, Xi Wang; Shanghai Institute of Microsystem and Information Technology, China.

11:00 AM *C2-S2.1 (invited)
Combined Super STEM, and PL Spectroscopy of Un-Doped and Rare Earth Doped nc-Si-rich SiO_x and SiN_x Thin Films on (100) Si. (#329) Matthew Peter Halsall¹, Iain Crowe¹, Tyler Roschuk², Ben Sherliker¹, Ursel Bangert¹, Andrew Knights², Peter Mascher²; ¹School of Electrical and Electronic Engineering, The University of Manchester, United Kingdom ; ²McMaster University, Hamilton, Ontario, Canada.

11:30 AM C2-S2.2
Silicon Oxide-Embedded Silicon Nanocyrstallites Prepared by Phase-Separation of Silicon-Rich Silicon Oxide. (#237) Chun K. Wong, Hei Wong; Department of Electronic Engineering, City University of Hong Kong, Hong Kong.

11:45 AM C2-S2.3
Influence of Matrix Properties on Luminescence Related to Ion-Synthesized Si Nanoclusters. (#401) David Tetelbaum¹, Alexey Mikhaylov¹, Alexey Belov¹, Yulia Mendeleva¹, Alexey Ershov¹, Alexandr Kasatkin¹, Oleg Gorshkov¹, Anatoly Kovalev², Dmitry Wainstein², Rasit Turan³, Terje Finstad⁴; ¹Physico-Technical Research Institute of University of Nizhny Novgorod, Russian Federation ; ²Surface Phenomena Research Group, Russian Federation ; ³Middle East Technical University, Ankara, Turkey ; ⁴University of Oslo, Norway.

12:00 PM C2-S2.4
Integration of Low Dimensional Crystalline Si into Functional Epitaxial Oxides for Next Generation Solar Cell Application. (#688) Apurba Laha¹, Andreas Fissel¹, Eberhard Bugiel¹, Mikhail Badylevich², Valeri Afanasiev², Hans Jörg Osten¹; ¹Information Technology Laboratory, Leibniz University of Hannover, Germany ; ²Department of Physics, University of Leuven, Belgium.

2:00 PM *C2-S3.1 (invited)
Alloying, Self-Ordering and Stability of Ge/Si Semiconductor Nanostructures. (#1393) Federico Rosei, Institut National de la Recherche Scientifique, Énergie, Matériaux et Télécommunications (INRS-EMT), Canada.

2:30 PM C2-S3.2
Structural Characteristics of Epitaxial GeSi/Si Quantum Dots During the Initial Si Capping. (#562) Yue Qin Wu¹, Fan Hua Li¹, Jian Hui Lin¹, Zui Min Jiang¹, Jin Zou²; ¹Fudan University, Shanghai, China ; ²The University of Queensland, Brisbane, Australia.

2:45 PM C2-S3.3
Chalcogen Doping for Infrared Optoelectronic Si. (#1140) Brion Bob¹, Supakit Charnvanichborikarn², Jeffrey M. Warrender¹, Atsushi Kohno³, Malek Tabbal⁴, Jim S Williams², Dimitris Papazoglou⁵, Michael J. Aziz¹; ¹Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA ; ²Research School of Physical Sciences and Engineering, Australian National University, Australia ; ³Department of Applied Physics, Fukuoka University, Japan ; ⁴Department of Physics, American University of Beirut, Lebanon ; ⁵Materials Science and Technology Department, University of Crete and Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas (FORTH), Greece.

3:00 PM C2-S3.4
Point Defect Engineered Sub-Bandgap Si Light-Emitting Diode. (#755) Supakit Charnvanichborikarn¹, Yu Yang², Jiming Bao³, Malek Tabbal⁴, Taegon Kim³, Yin-Yin Jennifer Wong-Leung¹, Jim S Williams¹, Michael Aziz³, Federico Capasso³; ¹Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia ; ²Institute of Engineering and Technology, Yunnan University, China ; ³Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA ; ⁴Department of Physics, American University of Beirut, Lebanon.

3:15 PM C2-S3.5
Maskless Patterned Etching of Silicon Dioxide by Inkjet Printing. (#697) Alison Joan Lennon, Anita Ho-Baillie, Stuart Wenham; School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, Australia.

4:00 PM *C2-S4.1 (invited)
MEMS-based Tunable Fabry-Perot Filters on Silicon Substrates. (#880) Jason S Milne, John M Dell, Adrian J Keating, Lorenzo Faraone; School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.

4:30 PM C2-S4.2
Pulsed Current Electrochemical Deposition for Porous Silicon Capping: Method to Improve Hardness and Stability of Porous Silicon. (#392) Nihad K. Ali, MD Roslan Hashim, Azlan Abdul Aziz; School of Physics, Univesiti Sains Malaysia, Penang, Malaysia.

4:45 PM C2-S4.3
Effect of Heat Treatment on Residual Stress in PECVD SiN_x Thin Films. (#901) Yimeng Yang, Yinong Liu, John Dell; The University of Western Australia, Australia.