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SYMPOSIUM B

2:00 PM *B3-S3.1 (invited)
Emerging Photonics Applications of Large, Flexible Arrays of Microcavity Plasma Devices. (#1423) J G Eden, Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois Urbana, USA.

2:30 PM B3-S3.2
The Detached Solidifaction of Ga_1-xIn_xSb_{(x < 0.5)} bulk Single Crystal Grown by Vertical Directional Solidification Technique on the Earth. (#39) Dattatray Bhairu Gadkari, Brijmohan Arora; Department of Physics, Mithibai College, Mumbai, India.

2:45 PM B3-S3.3
Configuration Control of Quantum Dot Molecules by Droplet Epitaxy. (#1453) Kimberly A Sablon, J H Lee, Zh Wang, J Shultz, G J Salamo; Institute of Nanoscale Science and Engineering, University of Arkansas, USA.

3:00 PM B3-S3.4
Composition-Dependent Inter-Atomic Distance Distributions and Bond Angles in Ga_1-xIn_xP Alloys Measured by Extended X-Ray Absorption Fine Structure Spectroscopy. (#598) Claudia Sarah Schnohr¹, Leandro L. Araujo¹, Patrick Kluth¹, David J. Sprouster¹, Garry J. Foran², Mark C. Ridgway¹; ¹Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia ; ²Australian Nuclear Science and Technology Organisation, Australia.

4:00 PM *B3-S4.1 (invited)
Effects of Surface Passivation on AlGaN/GaN High-Electron-Mobility Transistors. (#1425) S. Arulkumaran, MMIC Design Center, Temasek Laboratories@NTU, Nanyang Technological University, Singapore.

4:30 PM B3-S4.2
2D Patterned GaN_xAs_1-x Quantum Structures using Energetic Beams. (#711) Taeseok Kim¹, Venkatesh Narayanamurti¹, Michael J. Aziz¹, Kirsten Alberi², Oscar D. Dubon²; ¹Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA ; ²Univ. Calif. Berkeley and Lawrence Berkeley Nat. Lab., USA.

4:45 PM B3-S4.3
Annealing Effect of the Co Ion-Implanted ZnO Epitaxial Thin Film. (#978) Yen-Fa Liao, Tzu-Wen Huang, Kuan-Li Yu, Chih-Hao Lee; Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan.

5:00 PM B3-S4.4
Low Temperature III-V Wafer Bonding with Electrically Conductive Interface Facilitated by Dry Surface Passivation Method. (#1153) Michael James Jackson, Mark S Goorsky; Department of Materials Science and Engineering, University of California, Los Angeles, USA.

5:15 PM B3-S4.5
Anomalous Transport in Ferromagnetic GaAs/InGaAs/GaAs Quantum Well Delta-Doped with Mn and C. (#1237) Vladimir Kulbachinskii¹, Ljudmila Shchurova², Nicolay Kuznetsov¹; ¹Low Temperature Physics Department, Physics Faculty, Moscow State University, Russian Federation ; ²Physical Institute of RAS, Russian Federation.

9:00 AM *B4-S1.1 (invited)
Thermal Stability of Ordered Arrays of Au Nanoparticles Deposited on Sapphire. (#684) Paul Ziemann, Frank Weigl, Berndt Koslowski; Solid State Physics, Universität Ulm, Germany.

9:30 AM B4-S1.2
Electron Beam Doping in Semiconductors at Room Temperature by Recombination-Induced Defect Reaction. (#948) Takao Wada¹, Hiroshi Fujimoto²; ¹Nagoya Institute of Technology, Japan ; ²Daido Institute of Technology, Japan.

9:45 AM B4-S1.3
Enhanced Ultra-Violet Photoresponse of Nanostructured Zinc Oxide (ZnO) Thin Film Irradiated with Pulsed Laser. (#1432) Vinay Gupta, Rashmi Menon, K Sreenivas; Electronic Materials and Devices Laboratory, Department of Physics and Astrophysics, University of Delhi, India.

11:00 AM *B4-S2.1 (invited)
Recent Progress in Mid-IR Interband Cascade Lasers. (#1472) Kamjou Mansour¹, Rui Q Yang²; ¹Jet Propulsion Laboratory, USA ; ²University of Oklahoma, USA.

11:30 AM *B4-S2.2 (invited)
A Simple Quasiclassical Treatment of Bias-Dependent Carrier Capture in Quantum Wells. (#658) G. S. Cargill III, Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania, USA.

12:00 PM B4-S2.3
Nearly Surface-Free Confinement of Excitons in Single GaAs/AlGaAs Core-Shell Nanowires. (#348) M A Fickenscher¹, S Perera¹, T B Hoang¹, L M Smith¹, H E Jackson¹, J M Yarrison-Rice², Hannah Jane Joyce³, Qiang Gao³, H. Hoe Tan³, Chennupati Jagadish³, Yong Kim⁴, X Zhang⁵, J Zou⁵; ¹Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA ; ²Miami University, Oxford, Ohio, USA ; ³The Australian National University, Australian Capital Territory, Australia ; ⁴Dong-A University, Busan, Republic of Korea ; ⁵The University of Queensland, Brisbane, Australia.

12:15 PM B4-S2.4
VCSEL Array Based Fluid Flow Measurements Using the Self-Mixing Effect. (#1049) Yah Leng Lim, Russell Kliese, Karl Bertling, Aleksandar D Rakić; School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane, Australia.

2:00 PM *B4-S3.1 (invited)
Growth Behavior of Epitaxial Semiconductor Nanowire Heterostructures. (#440) Jin Zou¹, Mohanchand Paladugu¹, Yanan Guo¹, Xin Zhang¹, Graeme Auchterlonie¹, Hannah Jane Joyce², Qiang Gao², H. Hoe Tan², Chennupati Jagadish², Yong Kim³; ¹The University of Queensland, Brisbane, Australia ; ²Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia ; ³Dong-A University, Republic of Korea.

2:30 PM B4-S3.2
Investigation on Electro-Optical Switch Using Heterojunction Phototransistors with Double Emitters. (#599) Shao-Yen Chiu, Chung-Hsien Wu, Jung-Hui Tsai, Wen-Shiung Lour; Department of Electrical Engineering, National Taiwan Ocean University, Taiwan.

2:45 PM B4-S3.3
HgCdTe MWIR Plasma-Type Converted Photodiodes Passivated with MBE CdTe and Low Temperature PECVD SiN. (#561) Ryan James Westerhout, Charles Musca, Jarek Antoszewski, John Dell, Lorenzo Faraone; Microelectronics Research Group, School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.

3:00 PM B4-S3.4
Sidewall Effects of MBE Grown CdTe for MWIR HgCdTe Photoconductors. (#1022) Jing Zhang, Ryan James Westerhout, Gordon K. O. Tsen, John M. Dell, Lorenzo Faraone; Microelectronics Research Group, School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.

3:15 PM B4-S3.5
An empirical potential approach to the formation of InAs stacking-fault tetrahedron in InAs/GaAs(111). (#605) Tomonori Ito¹, Hidenori Joe¹, Toru Akiyama¹, Kohji Nakamura¹, Kiyoshi Kanisawa²; ¹Mie University, Tsu, Japan ; ²NTT Basic Research Laboratories, Japan.

4:00 PM *B4-S4.1 (invited)
Unraveling the free electron behavior in InN. (#1431) Vanya Darakchieva, Department of Physics, Chemistry and Biology, Linköping Univeristy, Sweden.

4:30 PM B4-S4.2
Characterisation of Nitrogen-Related Defects in Compound Semiconductors by Near-Edge X-Ray Absorption Fine Structure. (#124) Mladen Petravic, Department of Physics, University of Rijeka, Croatia.

4:45 PM B4-S4.3
Amorphisation of Compound Semiconductors - A New Insight into Ternary Compounds. (#492) Zohair S Hussain¹, Claudia S Schnohr¹, Garry J. Foran², Mark C Ridgway¹; ¹Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia ; ²Australian Nuclear Science and Technology Organisation, Australia.

B4-S5.1
First-Principles Study of Electronic Structure and Ground-State Propterties of Alkali-Metal Selenides and Tellurides (M2A) [M: Li, Na, K; A: Se, Te]. (#22) Rajagopal Dashinamoorthy Eithiraj, Department of Physics, Anna University, Chennai, India.

B4-S5.2
Approach for Selecting Appropriate Dopant and Doping Method for Metal Oxide Semiconductors. (#28) Mohsen Purahmad, Electrical Engineering Faculty, K.N.Toosi University of Technology, Iran.

B4-S5.3
Characterization of Enhancement-mode InP N-channel MOSFET with LPD-TiO2 Gate Oxide. (#43) Ming-Kwei Lee, Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan.

B4-S5.4
Carrier Gas Dependence of Quantum Dot Formation by LP-MOCVD. (#48) Zongyou Yin, Jixuan Zhang, Hao Gong; Nanyang Technological University, Singapore.

B4-S5.5
Crystal Growth of CZT and its Properties for the Application in X-Ray and Gamma-Ray Detectors. (#106) Wanqi Jie, Tao Wang; School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, China.

B4-S5.6
Gas-Sensing Properties of Perovskite-Type CdSnO₃ Based Semiconductors. (#146) Xiaohua Jia, Huiqing Fan; School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, China.

B4-S5.7
Electronic Behavior of Indium-V Semiconductors. (#243) Uma Shankar Sharma¹, U P Verma²; ¹Department of Physics, Rustamji Institute of Technology - BSF, Tekanpur, India ; ²Jiwaji University, Gwalior, India.

B4-S5.8
Exact Analytical Expression for Quantum Corrections to the Conductivity (Magnetoresistance): Alavi-Rouhani Equation.. (#314) (Seyed) Ali Asghar Alavi, Abdolrashid Tatar; Department of Physics, Sabzevar University of Tarbiat Moalem, Iran, Iran.

B4-S5.10
The Thermal Expansion of Mercury Indium Telluride Crystals. (#495) Linghang Wang, Wanqi Jie, Yang Yang; State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, China.

B4-S5.11
InP/InGaAs pnp Heterostructure-Emitter Bipolar Transistor. (#553) Jung-Hui Tsai¹, Shao-Yen Chiu², Wen-Shiung Lour², Yu-Chi Kang¹, Ning-Xing Su¹; ¹Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, Taiwan ; ²National Taiwan Ocean University, Taiwan.

B4-S5.12
Investigation of Field-Plate Gate on Heterojunction Doped-Channel Field Effect Transistors. (#645) Meng-Kai Hsu¹, Shao-Yen Chiu¹, Chung-Hsien Wu¹, Kang-Ping Liu¹, Jung-Hui Tsai², Wen-Shiung Lour¹; ¹Department of Electrical Engineering, National Taiwan Ocean University, Taiwan ; ²Electrical Engineering, National Kaohsiung Normal University, Taiwan.

B4-S5.13
Laser Beam Induced Current for Qualitative Evaluation of HgCdTe van der Pauw Sample Uniformity. (#986) Benjamin Alan Park, School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.

B4-S5.14
Investigation of the Behavior of the VCSEL Linewidth Enhancement Factor under Optical Feedback using the Self-Mixing Technique. (#1051) A. Ashrif A. Bakar¹, Tom Taimre², Yah Leng Lim¹, Russell Kliese¹, Aleksandar D. Rakić; ¹School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane, Australia ; ²Department of Mathematics, The University of Queensland, Brisbane, Australia.

B4-S5.16
Scattering of Carries in ?-Doped Mn InGaAs Quantum Well with Hole-Mediated Ferromagnetism. (#1234) Ljudmila Shchurova, Vladimir Kulbachinskii; Department of Solid State Physics, Physical Institute of RAS, Moscow, Russian Federation.

B4-S5.17
Influences of Substrate Temperature on the Surface Planarization of Indium Tin Oxide for Optoelectronics Applications. (#650) Woo-Sun Lee, Gwon-Woo Choi, Yong-Jin Seo; Department of Electrical Engineering, Daebul University, Yeongam County, South Jeolla, Republic of Korea.

B4-S5.18
Negative Magnetoresistance Behaviour in Insulating n-type InP and CdSe Semiconductors and Localized Magnetic Moments at Very Low Temperatures. (#98) Abdelhamid El kaaouachi, Rachid Abdia, Abdelhakim Nafidi; Faculty of Sciences, University Ibn Zohr, Agadir, Morocco.

B4-S5.19
Fabrication and Characterization of Nitride Base Photodiodes with Nanostructure. (#1055) Tsair-Chun Liang¹, Shang-Chao Hung², Hsi-Shan Huang¹; ¹Graduate Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung City, Taiwan ; ²Department of Information Technology and Communication, Shih Chien University, Kaohsiung, Taiwan.

B4-S5.20
Dielectric Study and Thermodynamic Properties of Fluorobenzene and Liquid Crystal Structure in Polar and Non-Polar Solvent at Different Temperatures. (#1380) Amid Ranjkesh, Department of Chemistry, Guilan University, Iran.

B4-S5.21
Various Annealing Methods for Activation of Arsenic in Molecular Beam Epitaxy Grown HgCdTe. (#844) Gordon Keen Onn Tsen, Jing Zhang, Charles A Musca, John M Dell, Jarek Antoszewski, Lorenzo Faraone; School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia.