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SYMPOSIUM A

11:00 AM *A1-S2.1 (invited)
Could Gallium Nitride and Silicon Be the Dominant Semiconductors in the Future?. (#1420) Umesh Mishra, Electrical & Computer Engineering, University of California, Santa Barbara, USA.

11:30 AM A1-S2.2
The Influence of Interfacial Oxygen Vacancies on Schottky Contacts to ZnO. (#918) Martin W Allen, Steven M Durbin; University of Canterbury, New Zealand.

11:45 AM A1-S2.3
Investigation of Electronic Structures on O^- and Zn^- Polar ZnO Single Crystal Surfaces by Hard X-ray Photoemission Spectroscopy and LDA+U Calculation. (#976) Tetsuya Yamamoto¹, Keisuke Kobayashi², Jung-Jin Kim³, Eiji Ikenaga³, Masaaki Kobata², Shigenori Ueda², Hisao Makino¹, Takafumi Yao⁴; ¹Materials Design Center, Kochi University of Technology, Kami, Japan ; ²SPring-8/NIMS, Japan ; ³SPring-8/JASRI, Japan ; ⁴Tohoku University, Japan.

2:00 PM *A1-S3.1 (invited)
Challenges of Diamond-based Electronic Devices. (#1290) Makoto Kasu, Kenji Ueda, Hiroyuki Kageshima, Yoshitaka Taniyasu; Thin-film Materials Research Group, NTT Basic Research Laboratories, NTT Corporation, Japan.

2:30 PM A1-S3.2
Computational Characterization of Diamond Nanoparticles for Use in Nanoscale Applications. (#154) Amanda Susan Barnard¹, Michael Sternberg²; ¹The University of Melbourne, Parkville, Victoria, Australia ; ²Argonne National Laboratory, USA.

2:45 PM A1-S3.3
Mapping of Charge Collection Efficiency in Single Crystal Synthetic Diamond Detectors Using Ion Beam Induced Charge Microscopy. (#350) Kumaravelu Ganesan, Andrew Alves, Changyi Yang, Julius Obonyo Orwa, Alastair Stacey, Steven Prawer, David Norman Jamieson; ARC Centre of Excellence for Quantum Computer Technology, School of Physics, The University of Melbourne, Parkville, Victoria, Australia.

3:00 PM A1-S3.4
Wide Band Gap Gallium Oxide Semiconductors with Deep Ultraviolet Optical Functions. (#222) Shizuo Fujita, Takayoshi Oshima, Daisuke Shinohara, Takeya Okuno; Kyoto University, Japan.

3:15 PM A1-S3.5
Feasibility of Light Emitting Diodes (LEDs) as General Lighting Source. (#128) Golam Kafi Mustafa¹, Monzur Alam Imteaz²; ¹University of Engineering & Technology, Bangladesh ; ²Faculty of Engineering & Industrial Sciences, Swinburne University of Technology, Hawthorn, Victoria, Australia.

4:00 PM A1-S4.1
Vacancy Driven Microstructure Evolution in GaN. (#511) Maria G. Ganchenkova¹, Vladimir A. Borodin², Risto M. Nieminen³; ¹COMP/Laboratory of Physics, Helsinki University of Technology, Espoo, Finland ; ²Russian Research Centre, Kurchatov Institute, Russian Federation ; ³Helsinki University of Technology, Finland.

4:15 PM A1-S4.2
AC Bias-Assisted Photoenhanced Oxidation of n-GaN in DI Water. (#604) Tao-Hung Hsueh¹, Chun-Yi Yeh¹, Li-Chi Peng¹, Kuo-Hua Chang¹, Fang-I Lai², Wei-Chih Lai¹, Ming-Lun Lee³, Jinn-Kong Sheu¹; ¹Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan ; ²Yuan Ze University, Taoyuan, Taiwan ; ³Southern Taiwan University, Taiwan.

4:30 PM A1-S4.3
Improved Robustness of AlGaN/GaN HEMTs Using Deuterium and Temperature Effect to Passivate the Structural Defects. (#1154) Jean-Guy Tartarin¹, Guilhem Astre¹, Laurent Bary¹, Jacques Chevallier², Sylvain Delage³; ¹Laboratoire d'Analyse et d'Architecture des Systèmes, Centre National de la Recherche Scientifique, LAAS-CNRS, Université de Toulouse, France ; ²GEMaC, CNRS, France ; ³TIGER, France.

4:45 PM A1-S4.4
The Low Temperature Growth of Group III Nitride Films by RPCVD. (#589) K. Scott Alexander Butcher, Marie Wintrebert-Fouquet, Satyanarayan Barik, Tim Dabbs, Alanna Judith Fernandes; BluGlass Limited, Australia.

5:00 PM A1-S4.5
Investigation and Manipulation of Space Charged Regions in GaN and InN Nanocolumns. (#615) Merten Niebelschütz¹, Volker Cimalla², Oliver Ambacher², Andreas Schober³, Javier Grandal⁴, Miguel Á�ngel Sánchez-Garcí­a⁴, Enrique Calleja⁴; ¹Institute of Micro- and Nanotechnologies, Technische Universität Ilmenau, Jülich, Germany ; ²Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Germany ; ³Institute of Micro- and Nanotechnologies, Technische Universität Ilmenau, Germany ; ⁴ISOM, Universidad Politécnica Madrid, Spain.

A1-S5.1
Pulsed Laser Deposited Stoichiometric ZnO Thin Films. (#447) Almamun Ashrafi, Imam Rofi'i, H. Hoe Tan, Chennupati Jagadish; Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia.

A1-S5.2
Experimental and Numerical Investigation of the Electrical Characteristics of Vertical n-p Junction Diodes Created by Si Implantation into p-GaN. (#820) Azlan Baharin¹, Martin Kocan¹, Gilberto A. Umana-Membreno¹, Giacinta Parish¹, Brett D. Nener¹, Umesh K. Mishra²; ¹School of Electrical Electronic and Computer Engineering, The University of Western Australia, Australia ; ²University California Santa Barbara, USA.

A1-S5.3
The ZnO Films Growth on SiN_x Coated Glass by RF Magnetron Sputtering. (#360) Wang Chao, Yang Xiaotian, Ma Xianmei, Liu Boyang, Zhao Chunlei, Tang Wei, Yang Jia, Gao Xiaohong, Jing Hai, Du Guotong;

A1-S5.4
In-situ Annealing Effects on ZnO:Li Thin Films by PLD. (#582) Byeong-Eog Jun, Yu Sung Kim, Byung Chun Choi, Byung Kee Moon, Jung Hyun Jeong; Pukyong National University, Republic of Korea.

A1-S5.5
Effect of the Oxygen Partial Pressure on PLD of Be-Doped ZnO Thin Films. (#1059) Jun-Ki Chung, Won-Jeong Kim, Tae Kwon Song, Cheol Jin Kim; Institute of Industrial Technology, Changwon National University, Changwon, Republic of Korea.

A1-S5.6
High Resolution Deep Level Transient Spectroscopy of p-n Diodes Formed from p-Type Polycrystalline Diamond on n-Type Silicon. (#703) Karen Dorothy Vernon-Parry¹, Jan Evans-Freeman¹, Niki Mitromara¹, Paul W May²; ¹Research Centre for Electronic Devices and Materials, Materials and Engineering Research Institute, ACES Faculty, Sheffield Hallam University, United Kingdom ; ²University of Bristol, United Kingdom.

A1-S5.8
New Field and Thermionic Emission Mapping Techniques and Results, using an Atomis Force Microscope. (#717) Suzanne Furkert, University of Canterbury, New Zealand.

A1-S5.9
Observation of Confined Optical Phonon Modes in Small Period AlGaN/GaN Grown by MOVPE. (#332) Matthew Peter Halsall¹, Ben Sherliker¹, Ursel Bangert¹, Peter James Parbrook², Tao Wang²; ¹School of Electrical and Electronic Engineering, The University of Manchester, United Kingdom ; ²The University of Sheffield, United Kingdom.

A1-S5.10
SIMS Investigation on the 3C-SiC on Si. (#1026) Jisheng Han¹, Sima Dimitrijev¹, Philip George Tanner¹, Frederick Kong¹, Armand Atanacio²; ¹Griffith University, Brisbane, Queensland, Australia ; ²Australian Nuclear Science and Technology Organisation, Australia.

A1-S5.11
Admittance and Impedance-Modulus Spectroscopy of Mn-, Co-, and Cr-doped ZnO. (#1105) Youn-Woo Hong, Hyun-Suk Hwang, Hyo-Soon Shin, Dong-Hun Yeo, Jong-Hee Kim, Jin-Ho Kim; Korea Institute of Ceramic Engineering and Technology, Republic of Korea.

A1-S5.12
Influence of the Annealing Condition on Physical Properties of Transparent Conductive Nanocrystalline AZO Thin Films Prepared by RF Sputtering. (#1164) Seied Manoochehr Hoseini Pilangorgi¹, Fatemeh Dehghan Nayeri¹, Ebrahim Asl Soleimani¹, Mohammad Reza Ketabdari², Shamsodin Mohajerzadeh¹; ¹University of Tehran, Iran ; ²Atomic Energy Organization of Iran, Exploration Division X-Ray Lab, Iran.

A1-S5.13
Radiation Induced Changes of Structure and Impurity Content of Synthetic Diamond at Nanoscale. (#249) Elvira Memet Ibragimova, Makhmud Umar Kalanov, Masudjon Abdurahman Kayumov, Eldar Mamed Gasanov; Radiation Solid State Physics Department, Institute of Nuclear Physics, Ulugbek, Uzbekistan.

A1-S5.14
The Growth of ZnO Thin Films Based on SiN_x Coated Glass by MOCVD. (#362) Cao Jianlin, Yang Xiaotian, Wang Chao, Zhao Chunlei, Tang Wei, Gao Xiaohong, Yang Jia, Liu Boyang, Du Guotong;

A1-S5.15
Ni-Ti-Al Ohmic Contact to Al-Implanted 4H-SiC. (#568) Sung-Jae Joo, Jae Yeol Song, In Ho Kang, Wook Bahng, Sang Cheol Kim, Nam-Kyun Kim; Integrated Power Supply Research Group, Advanced Materials and Application Research Division, Korea Electrotechnology Research Institute (KERI), Changwon-City, Kyongnam, Republic of Korea.

A1-S5.16
Comparison of Wettability on Teflon-Modified Surfaces of Sputtered ZnO and ZnO Nanorods. (#364) Haidong Zheng, Kourosh Kalantar-Zadeh, Michael Breedon; School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia.

A1-S5.17
Growth and Characterizations of Phosphorus Ion Impanted ZnMnO Thin Film by Sputtering Method. (#187) Deuk Young Kim, Hajong Bong, Youn Hwan Lee; Dongguk University, Republic of Korea.

A1-S5.18
Growth and Characterization of High Quality Single Crystal ZnMgO Films on Al₂O₃ Substrates by r. f. Magnetron Sputtering. (#1048) Il-Soo Kim, Byung-Teak Lee; Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, Gwangju, Republic of Korea.

A1-S5.19
Self-Mixing Displacement Sensing Using the Junction Voltage Variation in a GaN Laser. (#859) Russell Kliese¹, A. Ashrif A. Bakar¹, Yah Leng Lim¹, Thierry Bosch², Aleksandar D. Rakić¹; ¹School of Information Technology and Electrical Engineering, The University of Queensland, Brisbane, Australia ; ²ENSEEIHT-Laboratoire d'Electronique, France.

11:00 AM *A2-S2.1 (invited)
Lasing Properties of ZnO Nanostructures with Various Morphologies. (#1419) Takafumi Yao, Sang Hyun Lee, Hiroshi Miyazaki, Takenari Goto; Center for Interdisciplinary Research, Tohoku University, Sendai, Japan.

11:30 AM A2-S2.2
Total-Dose Radiation-Induced Effects in AlGaN/GaN High Electron Mobility Transistors. (#1226) Gilberto A Umana-Membreno, John M Dell, Giacinta Parish, Brett D Nener, Lorenzo Faraone, Umesh K. Mishra; School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Australia.

11:45 AM A2-S2.3
Two-Step Growth and Structural Properties of a-plane GaN Grown on r-plane Sapphire by Molecular Beam Epitaxy. (#1160) G. Tsiakatouras¹, J. Smalc-Koziorowska², Ph. Komninou², K. Tsagaraki³, A. Georgakilas⁴; ¹Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH) and Physics Department, University of Crete, Heraklion Crete, Greece ; ²Department of Physics, Aristotle University of Thessaloniki, Greece ; ³University of Crete, Heraklion, Greece ; ⁴Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH) and Physics department, University of Crete, Heraklion Crete, Greece.

12:00 PM A2-S2.4
AlGaN/AlN Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector. (#452) Han Ping, Xie Zili, Zhang Rong, Zhou Ningshen; Physical Department, Nanjing University, China.

2:00 PM *A2-S3.1 (invited)
Perspectives of Ferroelectric Gate SiC FETs. (#882) Alexander M Grishin, Department of Condensed Matter Physics, Royal Institute of Technology, Kista, Sweden.

2:30 PM A2-S3.2
Instability of Deep Levels Generated by Ion Implantation in 4H-SiC during DLTS Analysis. (#671) Yin-Yin Jennifer Wong-Leung¹, Bengt Gunnar Svensson²; ¹Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory, Australia ; ²University of Oslo, Norway.

2:45 PM A2-S3.3
Current Mechanisms in 3C-SiC / Si Heterojunction Diodes. (#971) Philip Tanner, Sima Dimitrijev, H. Barry Harrison; Queensland Microtechnology Facility, Griffith University, Brisbane, Queensland, Australia.

3:00 PM A2-S3.4
Isotropic Dry-Etching of SiC for AlGaN/GaN MEMS Fabrication. (#648) Florentina Niebelschuetz¹, Jörg Pezoldt¹, Thomas Stauden¹, Volker Cimalla², Klemens Brueckner¹, Matthias Hein¹, Oliver Ambacher², Andreas Schober¹; ¹Institut für Mikro- und Nanotechnologien Technische Universität Ilmenau, Jülich, Germany ; ²Fraunhofer-Institut für Angewandte Festkörperphysik IAF, Germany.

3:15 PM A2-S3.5
Plasma Synthesis of Boron Nitride Buckling Nanowires Thin Film. (#320) Hsi-Lien Hsiao, Department of Physics, Tunghai University, Taichung, Taiwan.

4:00 PM A2-S4.1
Al_xGa_1-xN Crystals Growth under High N₂ Pressure. (#419) Andrey Belousov, Sergei Katrych, Peter Wägli, Jan Jun, Bertram Batlogg, Janusz Karpinski; Laboratory for Solid State Physics, Swiss Federal Institute of Technology, ETH Zürich, Switzerland.

4:15 PM A2-S4.2
Opto-Electrical Characteristics of the Mg Doped Nonpoplar (11-20) GaN on R plane Sapphire. (#1116) Wei-Chih Lai¹, Wei-Yu Yen¹, S.J. Cheng¹, Li-Chi Pen¹, Jinn-Kong Sheu¹, Ming-Lun Lee², Tao-Hung Hseu¹, Cheng-Huang Kuo³, Yu-Pin Hsu⁴, Cheng-Ta Kuo⁴; ¹National Cheng Kung University, Tainan, Taiwan ; ²Southern Taiwan University, Tainan, Taiwan ; ³National Central University, Jhongli, Taoyuan, Taiwan ; ⁴Epistar Co. Ltd., Taiwan.

4:30 PM A2-S4.3
High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN. (#269) Deniz Emiroglu¹, Jan H Evans-Freeman¹, Menno J Kappers², Clifford McAleese², Colin J Humphreys²; ¹Research Centre for Electronic Devices and Materials, Materials and Engineering Research Institute, ACES Faculty, Sheffield Hallam University, United Kingdom ; ²Cambridge University, United Kingdom.

4:45 PM A2-S4.4
The Synthesis of [100] Wurtzite InN Nanowires and [011] Zincblende InN Nanorods. (#389) Xie Zili, Zhang Rong, Han Ping, Zhou Ningshen; Physical Department, Nanjing University, China.

5:00 PM A2-S4.5
Epitaxial Growth of c-GaN Thin Films on SiC/Si by IBA-MBE. (#1117) Maik Haeberlen¹, Juergen W Gerlach², Jörg K. N. Lindner¹, Brian Murphy³, Bernd Stritzker¹; ¹Universität Augsburg, Institut für Physik, Augsburg, Germany ; ²Leibniz Institute of Surface Modification, Germany ; ³Siltronic AG, Germany.

A2-S5.1
Energy Spike Effects in Ion-Bombarded GaN. (#813) S. O. Kucheyev¹, A. Yu. Azarov², P. A. Karaseov², A. I. Titov²; ¹Lawrence Livermore National Laboratory, Livermore, California, USA ; ²St. Petersburg State Polytechnic University, Russian Federation.

A2-S5.2
Suitability of Synthetic Diamond Films for X-ray Dosimetry Applications. (#273) Stuart Peter Lansley, Gregory Betzel, Lou Reinisch; Department of Physics & Astronomy, University of Canterbury, New Zealand.

A2-S5.4
Limits of Multifunctional Nanoanalytics of AlN/Ni for a Nanopositioning and Nanomeasuring Machine. (#499) Merten Niebelschütz¹, Volker Cimalla², Torsten Machleidt³, Karl Heinz Franke³, Oliver Ambacher², Andreas Schober¹; ¹Institute of Micro- and Nanotechnologies, Technische Universität Ilmenau, Jülich, Germany ; ²Fraunhofer-Institut för Angewandte Festkörperphysik IAF, Germany ; ³Technische Universität Ilmenau, Germany.

A2-S5.5
The Optical Anisotropic Properties of the m-Plane GaN Film. (#453) Zhou Ningshen, Xie Zili, Han Ping, Zhang Rong; Physical Department, Nanjing University, China.

A2-S5.6
Sprayed Fluorine-Doped Zinc Oxide Thin Films Deposited on Silicon Substrates: Effect of the Deposition Temperature on the Physical Characteristics. (#1170) A. Maldonado, M. de la L. Olvera; Electrical Engineering Department, CINVESTAV-IPN, Mexico.

A2-S5.7
Fluorine-Doped ZnO Thin Solid Films Deposited by Chemical Spray. Acidity Effect of the Starting Solutions on the Physical Properties. (#1171) M. de la L. Olvera, A. Maldonado; Electrical Engineering Department, CINVESTAV-IPN, Mexico.

A2-S5.8
Temperature Dependent Photoluminescence Characteristics of ZnO Tripods Grown by Vapor-Solid Technique. (#524) S. Mandal, Achintya Dhar, S. K. Ray; Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.

A2-S5.9
Identification of Bulk and Surface Sulfur Impurities in TiO₂ by Synchrotron X-Ray Absorption Near Edge Structure. (#867) Michael Francis Smith, Condensed Matter Theory Department, The University of Queensland, Brisbane, Australia.

A2-S5.10
Deposition of SiC Thin Films using a Hollow Cathode. (#276) Rodney J. Soukup, Natale J. Ianno, James L. Huguenin-Love, Noel T. Lauer; Department of Electrical Enginering, University of Nebraska, Lincoln, USA.

A2-S5.11
Effect of Vanadium-doping on Crystal Structure of ZnSe by MOVPE. (#601) Masahiro Tahashi, Zunyi Wu, Hideo Goto, Toshiyuki Ido; Department of Electrical Engineering, Chubu University, Kasugai, Aichi, Japan.

A2-S5.12
HFCVD Diamond Synthesis with Butyl Alcohol. (#1002) Yoshiki Takagi, Takayuki Hirai, Yusuke Shimada; Teikyo University of Science and Technology, Uenohara, Yamanashi, Japan.

A2-S5.13
Influence of Li-Dopants on the Luminescent and Ferroelectric Properties of ZnO Thin Films. (#985) Jinbin Wang, Yanjie Zhang, Yichun Zhou; Faculty of Materials, Optoelectronics and Physics, Xiangtan University, China.

A2-S5.14
GaN Films Grown on Silicon-on-Insulator Substrates. (#141) Mason X Wang, Bo Zhang, Jiayin Sun, Aimin Wu, Jing Chen, Xi Wang; Shanghai Institute of Microsystem and Information Technology, China.

A2-S5.15
Instrumentation for the Analysis of Gallium Nitride Grown by Remote Plasma Chemical Vapour Deposition.. (#588) Marie Wintrebert-Fouquet, BluGlass Limited, Australia.

A2-S5.16
The Comparision of the ZnO Films Growth Based on Different Substrates by MOCVD. (#363) Yang Xiaotian, Wang Chao, Ma Xianmei, Zhao Chunlei, Tang Wei, Gao Xiaohong, Liu Boyang, Du Guotong;

A2-S5.17
A Study of Un-doped ZnO Thin Films and the UV Detectors Fabricated. (#56) Lei Yu, Yimin Cui, Xiaofeng Pang, Li Zhao, Zhiyong Zhang; Physics Department, Beihang University, HaiDian District, BeiJing, China.

A2-S5.18
Mg_xZn_1-xO (x=0.32) Thin Films Grown by R.F. Sputtering. (#133) Lei Yu, Li Zhao, Yimin Cui, Xiaofeng Pang, Zhiyong Zhang; Physics Department, Beihang University, HaiDian District, BeiJing, China.

A2-S5.19
Deep Level Defect Study of As-Implanted ZnO p-n Junction. (#93) Congyong Zhu¹, Chi Chung Francis Ling¹, G. Brauer², W. Anwand², W. Skorupa²; ¹Department of Physics, The University of Hong Kong, Hong Kong ; ²Institut für Ionenstrahlphysik und Materialforschung, Germany.

11:00 AM *A3-S2.1 (invited)
Silicon Carbide Diodes and Transistors Designed to Be Used in Hybrid Silicon Carbide - Silicon Solution. (#1063) Peter Friedrichs, SiCED Electronics Development GmbH, Erlangen, Germany.

11:30 AM A3-S2.2
Stacking Fault Multiplicity and Core Composition of Edging Partial Dislocations in SiC. (#832) Maryse Lancin, Jean-Pierre Ayoub, Gabrielle Regula, Michael Texier, Bernard Pichaud; Institut Matériaux Microélectronique et Nanosciences de Provence (IM2NP), CNRS, Marseille, France.

11:45 AM A3-S2.3
Molecular Beam Epitaxy and Bandgap of InAlN Alloys. (#1151) A. Adikimenakis¹, E. Iliopoulos¹, C. Giesen², M. Heuken², G. Tsiakatouras¹, K. Tsagaraki¹, A. Georgakilas¹; ¹Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH) and Physics Department, University of Crete, Heraklion Crete, Greece ; ²Aixtron AG, Aachen, Germany.

12:00 PM A3-S2.4
Effect of Crystallinity on the Etch Rate of Si_xC_y Films with High Carbon Concentration Produced by PECVD. (#47) Mariana Amorim Fraga, Rodrigo Savio Pessoa, Marcos Massi, Homero Maciel; Technological Institute of Aeronautics, San Jose Dos Campos, São Paulo, Brazil.

2:00 PM *A3-S3.1 (invited)
Diamond-on-GaN Heterostructures - Towards a New Class of Extreme Performance Hybrid Devices. (#1422) M Dipalo¹, M Alomari¹, F Medjdoub¹, Erhard Kohn¹, C Pietzka¹, J-F Carlin², N Grandjean²; ¹Universität Ulm, Germany ; ²EPFL, Switzerland.

2:30 PM A3-S3.2
Spectral Stability of Colour Centres in Chemical Vapour Deposited Nano-Diamonds. (#1068) Alastair Stacey, Igor Aharonovich, Steven Prawer; The University of Melbourne, Parkville, Victoria, Australia.

2:45 PM A3-S3.3
Modulation of Mobility in Homoepitaxially-Grown AlGaN/GaN Heterostructures. (#1342) J. A. Grenko, C. W. Ebert, C. L. Reynolds, K. Y. Lai, Virginia D. Wheeler, M. A. L. Johnson, A. D. Hanser, E. A. Preble, L. Lui, T. Paskova, K. R. Evans; Department of Material Science and Engineering, North Carolina State University, Raleigh, USA.

4:00 PM *A3-S4.1 (invited)
Reliability of GaN-Based Devices. (#1421) Roberto Menozzi, Dipartimento di Ingegneria dell'Informazione, University of Parma, Italy.

4:30 PM A3-S4.2
The Growth and Properties of Free-Standing m-GaN Substrates by HVPE. (#242) Xiangqian Xiu, Department of Physics, Nanjing University, China.

4:45 PM A3-S4.3
In-situ Ag Doping of ZnO by Plasma-Assisted Molecular Beam Epitaxy. (#228) Jessica Chai, Rueben Mendelsberg, Roger Reeves, James Metson, John Kennedy, Steven Durbin; The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering, University of Canterbury, New Zealand.

5:00 PM A3-S4.4
Optical and Structural Properties of Mg_xZn_1-xO Alloy Films Grown on Si Substrates. (#258) Yueh-Chien Lee¹, Sheng-Yao Hu², Jyh-Wei Lee¹, Jen-Ching Huang¹, Chia-Chih Huang¹, Jyi-Lai Shen¹; ¹Department of Electronic Engineering and Research Center for Micro/Nano Technology, Tungnan University, Taiwan ; ²Tung Fang Institute of Technology, Taiwan.